Modeling semiconductor heteroepitaxy

Modeling the growth and evolution of semiconductor systems is one of the major research activities of the MoSE group. The focus is mainly devoted to epitaxial systems spacing from the most conventional planar films to three-dimensional heterostructures at the nano- and micro-scale. Multi-scale studies are exploited to deal with the complex aspects governing the evolution of crystal structure and morphology during growth, ranging from the atomistic properties and processes at the growing surface to the large scale dynamics.

In 2012, a new concept of hetero-epitaxy strategy was discovered: grow high-quality micron-sized Ge pillars on top of Si micro-pillars. A results which deserved the cover on the prestigious journal Science.