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Modeling Semiconductor Epitaxy

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Author: Matteo Vaghi

New group website is online!

After a long editing, finally, the website is finally renewed and online! Thanks to all the contributors.

Matteo Vaghi 8 March 20248 March 2024 Group Read more

Contact info

Address:
University of Milano-Bicocca
Department of Materials Science

via R. Cozzi 55
20125 Milano (MI)

About us

MoSE group is a theoretical group with a long-standing experience on semiconductors epitaxy and defects. The group expertise extends from meso/micro-scale continuum modeling to atomistic approaches, such as molecular dynamics and ab-initio calculations. In the belief that theory gets full power only in synergy with experiments, the group actively cooperates with experimentalists world-wide.

Important links

UniMIB

Dept. of Materials Science

L-NESS

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  • Home
  • Research
    • Modeling semiconductor heteroepitaxy
    • Defects & Strain relaxation
    • Projects & Collaborations
  • Publications
    • Full publications list
  • People
  • News

Last update on March 8th, 2024 at 03:34 pm

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