Projects & Collaborations

Projects

3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices

micro-crystals Single Photon InfraREd detectors

TEcnologie INnovative per i VEicoli INtelligenti

Scientific partners

Industrial partners

Contact info

Address:
University of Milano-Bicocca
Department of Materials Science

via R. Cozzi 55
20125 Milano (MI)

About us

MoSE group is a theoretical group with a long-standing experience on semiconductors epitaxy and defects. The group expertise extends from meso/micro-scale continuum modeling to atomistic approaches, such as molecular dynamics and ab-initio calculations. In the belief that theory gets full power only in synergy with experiments, the group actively cooperates with experimentalists world-wide.

Important links

UniMIB

Dept. of Materials Science

L-NESS

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Last update on April 4th, 2019 at 04:33 pm

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